科研速递论坛

标题: Integrated submicron switching transistor breaking the Si limit at 100 V [打印本页]

---

作者: lzsz    时间: 2021-5-30 09:08
标题: Integrated submicron switching transistor breaking the Si limit at 100 V

题名	Integrated submicron switching transistor breaking the Si limit at 100 V
链接	https://digital-library.theiet.org/content/conferences/10.1049/ic_20080215

IET

---

欢迎光临 科研速递论坛 (http://www.expaper.cn/)

Powered by Discuz! X2.5