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标题: Resistive-switching crossbar memory based on Si3N4/SiO2 bi-layer structure an... [打印本页]

作者: tookey0116 时间: 2017-2-21 08:51
标题: Resistive-switching crossbar memory based on Si3N4/SiO2 bi-layer structure an...

题名	Resistive-switching crossbar memory based on Si3N4/SiO2 bi-layer structure and copper chemical displacement technique
链接	http://ieeexplore.ieee.org/document/7528658/?part=1

作者: wjw2016 时间: 2017-2-21 08:51
http://pan.baidu.com/s/1dE4oxtJ
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