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标题: Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In... [打印本页]

作者: tookey0116 时间: 2017-1-5 09:11
标题: Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In...

题名	Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3 devices for non-volatile memory applications
链接	http://pubs.rsc.org/en/Content/ArticleLanding/2016/TC/C6TC03607D#!divAbstract

作者: なつめたかし 时间: 2017-1-5 09:11
链接: http://pan.baidu.com/s/1kV8tLmn 密码: yg46

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