题名 | Effects of Crystallization and Non-Lattice Oxygen Atoms on Cu x O-Based Resistive Switching Memory |
链接 | http://www.ingentaconnect.com/content/asp/jnn/2013/00000013/00000001/art00066?token=005c1f2911f495a91ce1da5437a63736a6f7c6b465d7a766c5f2e2e6e6f644a467c79675d7c4e7247708a8246f19 |
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