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标题: Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin F... [打印本页]

作者: winter 时间: 2014-11-2 17:12
标题: Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin F...

题名	Interface Charge Trap Density of Solution Processed Ferroelectric Gate Thin Film Transistor Using ITO/PZT/Pt Structure
作者	Pham Van Thanhad, Bui Nguyen Quoc Trinhbe, Takaaki Miyasakob, Phan Trong Tuebc, Eisuke Tokumitsubc & Tatsuya Shimodaabc
杂志	Ferroelectrics Letters Section
年\|卷\|期	Volume 40, Issue 1-3, 2013
页码	pages 17-29
链接	http://www.tandfonline.com/doi/abs/10.1080/07315171.2013.813823#.VFX1fNL3ShN

作者: wwjjdd 时间: 2014-11-2 17:12
http://1000eb.com/zvzv

作者: wwjjdd 时间: 2014-11-2 17:12
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