题名 | Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures |
作者 | M. N. Drozdov, Yu. N. Drozdov, A. V. Novikov, P. A. Yunin, D. V. Yurasov |
杂志 | Semiconductors |
年|卷|期 | 2014, Volume 48, Issue 8 |
页码 | pp 1109-1117 |
链接 | http://link.springer.com/article/10.1134%2FS1063782614080090 |
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