科研速递论坛

标题: Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Comp... [打印本页]

作者: winter    时间: 2014-7-23 17:15
标题: Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Comp...
题名Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching
作者Chang Bum Lee ; Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea ;   Dong Soo Lee ;   Benayad, A. ;   Seung Ryul Lee
杂志Electron Device Letters, IEEE ...> Volume:32 Issue:3
年|卷|期Electron Device Letters, IEEE ...> Volume:32 Issue:3
页码Electron Device Letters, IEEE ...> Volume:32 Issue:3
链接http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5706345&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D5706345


作者: gyrowheel    时间: 2014-7-23 17:15
http://1000eb.com/xpp3
作者: gyrowheel    时间: 2014-7-23 17:15
1111111111111111111




欢迎光临 科研速递论坛 (http://www.expaper.cn/) Powered by Discuz! X2.5