题名 | Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching |
作者 | Chang Bum Lee ; Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea ; Dong Soo Lee ; Benayad, A. ; Seung Ryul Lee |
杂志 | Electron Device Letters, IEEE ...> Volume:32 Issue:3 |
年|卷|期 | Electron Device Letters, IEEE ...> Volume:32 Issue:3 |
页码 | Electron Device Letters, IEEE ...> Volume:32 Issue:3 |
链接 | http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5706345&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D5706345 |