| 题名 | Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance |
| 作者 | Wang, Z.Q. ; Key Lab. for UV-Emitting Mater. & Tech nology of Minist. of Educ., Northeast Normal Univ., Changchun, China ; Xu, H.Y. ; Li, X.H. ; Zhang, X.T. |
| 杂志 | Electron Device Letters, IEEE ...> Volume:32 Issue:10 |
| 年|卷|期 | Electron Device Letters, IEEE ...> Volume:32 Issue:10 |
| 页码 | Electron Device Letters, IEEE ...> Volume:32 Issue:10 |
| 链接 | http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5995141&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D5995141 |