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标题: Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC... [打印本页]

作者: lrmbest 时间: 2014-7-19 22:17
标题: Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC...

题名	Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy
作者	Tatsuo Yoshinobu, Hideaki Mitsui, Iwao Izumikawa, Takashi Fuyuki and Hiroyuki Matsunami
杂志	Appl. Phys. Lett.
年\|卷\|期	60,1992
页码	824
链接	http://scitation.aip.org/content/aip/journal/apl/60/7/10.1063/1.107430

作者: gyrowheel 时间: 2014-7-19 22:17
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作者: gyrowheel 时间: 2014-7-19 22:21
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