题名 | Effect of annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal–insulator–semiconductor (MIS) structure |
链接 | http://link.springer.com/article/10.1007%2Fs00339-013-7797-x |
http://link.springer.com/article/10.1007%2Fs00339-013-7797-x
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