| 题名 | Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4 Ternary Oxide as Gate Dielectric |
| 作者 | P.-C.Juan et.al |
| 杂志 | Jpn. J. Appl. Phys |
| 年|卷|期 | 48 (2009) |
| 页码 | 05DA02 |
| 链接 | http://jjap.jsap.jp/journal/JJAP-48-5S1.html |
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