题名 | Comparative Analysis of Nano-Scale Structural and Electrical Properties in AlGaN/GaN High Electron Mobility Transistors on SiC and Sapphire Substrates |
作者 | Wang, Cong; Cho, Sung-Jin; Kim, Nam-Young |
杂志 | Journal of Nanoscience and Nanotechnology |
年|卷|期 | Volume 13, Number 10, October 2013, |
页码 | pp. 7083-7088(6) |
链接 | http://dx.doi.org/10.1166/jnn.2013.7631 |
欢迎光临 科研速递论坛 (http://www.expaper.cn/) | Powered by Discuz! X2.5 |