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标题: Integrated submicron switching transistor breaking the Si limit at 100 V [打印本页]

作者: lzsz 时间: 2020-12-8 20:36
标题: Integrated submicron switching transistor breaking the Si limit at 100 V

题名	Integrated submicron switching transistor breaking the
链接	https://digital-library.theiet.org/content/conferences/10.1049/ic_20080215

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