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标题: Dynamic Avalanche Free Design in 1.2kV Si-IGBTs [打印本页]

作者: lzsz    时间: 2020-2-15 19:01
标题: Dynamic Avalanche Free Design in 1.2kV Si-IGBTs
题名Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation
链接https://ieeexplore.ieee.org/document/8993596/authors

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作者: zbgood2009    时间: 2020-2-15 19:01
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