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标题: Physical mechanism and device simulation on transient-induced latchup in CMOS... [打印本页]

作者: skycloud 时间: 2019-6-20 13:32
标题: Physical mechanism and device simulation on transient-induced latchup in CMOS...

题名	Physical mechanism and device simulation on transient-induced latchup in CMOS ICs under system-level ESD test
链接	https://ieeexplore.ieee.org/document/1468374

作者: zbgood2009 时间: 2019-6-20 13:32
https://box.zjuqsc.com/-81549508

作者: fenavi 时间: 2019-6-20 14:03
本帖最后由 lo7ve77 于 2019-6-25 15:07 编辑

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