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标题: Geometrical enhancement of low-field magnetoresistance in silicon [打印本页]

作者: bdy2013    时间: 2013-5-12 18:44
标题: Geometrical enhancement of low-field magnetoresistance in silicon
题名Geometrical enhancement of low-field magnetoresistance in silicon
作者C. Wan, et al.
杂志Nature
年|卷|期2011, V477
页码PP 304-307
链接http://www.nature.com/nature/journal/v477/n7364/abs/nature10375.html


作者: demigod    时间: 2013-5-12 18:44
华为网盘附件:
【华为网盘】nature10375.pdf

作者: demigod    时间: 2013-5-12 18:52
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