科研速递论坛

标题: Detailed physics based modeling of triple-junction InGaP/GaAs/Ge solar cell [打印本页]

作者: nucleus    时间: 2017-12-27 13:30
标题: Detailed physics based modeling of triple-junction InGaP/GaAs/Ge solar cell
题名Detailed physics based modeling of triple-junction InGaP/GaAs/Ge solar cell
作者Alexandre Fedoseyev; Timothy Bald; Ashok Raman; Seth Hubbard; David Forbes; Alexandre Freundlich
杂志Proceedings Volume 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III; 898119
年|卷|期7 March 2014
页码不详
链接https://www.spiedigitallibrary.org/conference-proceedings-of-spie/8981/1/Detailed-physics-based-modeling-of-triple-junction-InGaP-GaAs-Ge/10.1117/12.2040743.short

本帖最后由 nucleus 于 2017-12-27 16:10 编辑

请不要用百度网盘,新疆无法连接,谢谢!


作者: sample2007007    时间: 2017-12-27 13:30
http://disk.680.com/uaAjEv




欢迎光临 科研速递论坛 (http://www.expaper.cn/) Powered by Discuz! X2.5