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标题: Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping [打印本页]

作者: tookey0116 时间: 2017-9-14 11:22
标题: Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

题名	Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping
链接	http://aip.scitation.org/doi/10.1063/1.4991879

作者: pnas2009 时间: 2017-9-14 11:22
链接: https://pan.baidu.com/s/1mhLM6GK 密码: ewjk

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