科研速递论坛

标题: Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium–Tin... [打印本页]

作者: tookey0116 时间: 2016-11-14 13:19
标题: Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium–Tin...

题名	Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory
链接	http://ieeexplore.ieee.org/document/7539708/

作者: smart505 时间: 2016-11-14 13:19
http://disk.680.com/mYnMbm

欢迎光临科研速递论坛 (http://www.expaper.cn/)