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标题: Reducing operation voltages by introducing a low-k switching layer in indium... [打印本页]

作者: tookey0116 时间: 2016-9-13 08:38
标题: Reducing operation voltages by introducing a low-k switching layer in indium...

题名	Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory
链接	http://iopscience.iop.org/article/10.7567/APEX.9.061501/meta

作者: pnas2009 时间: 2016-9-13 08:38
http://pan.baidu.com/s/1jIAX52m

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