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标题: Engineering incremental resistive switching in TaOx based memristors for brai... [打印本页]

作者: tookey0116 时间: 2016-8-10 15:26
标题: Engineering incremental resistive switching in TaOx based memristors for brai...

题名	Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing
链接	http://xueshu.baidu.com/s?wd=paperuri%3A%289a3a3b47a40956d184a67cadcadc5664%29&filter=sc_long_sign&tn=SE_xueshusource_2kduw22v&sc_vurl=http%3A%2F%2Fpubs.rsc.org%2Fen%2Fcontent%2Farticlepdf%2F2016%2FNR%2FC6NR00476H&ie=utf-8&sc_us=11520214971215105334

作者: lben85 时间: 2016-8-10 15:26
本帖最后由 lben85 于 2016-8-10 15:57 编辑

链接: https://pan.baidu.com/s/1skMC4ZN 密码: 82uv

作者: tookey0116 时间: 2016-8-10 15:48

lben85 发表于 2016-8-10 15:26
http://disk.680.com/QVBbqy

您好，感谢应助，好像附件不对，麻烦您看一下，再次感谢

作者: lben85 时间: 2016-8-10 15:57

tookey0116 发表于 2016-8-10 15:48
您好，感谢应助，好像附件不对，麻烦您看一下，再次感谢

又被改了，已更新

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