题名 | Amorphous-Si-Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window |
链接 | http://onlinelibrary.wiley.com/doi/10.1002/aelm.201500370/abstract |
欢迎光临 科研速递论坛 (http://www.expaper.cn/) | Powered by Discuz! X2.5 |