科研速递论坛

标题: Effects of erbium doping of indium tin oxide electrode in resistive random ac... [打印本页]

作者: tookey0116 时间: 2016-5-19 08:16
标题: Effects of erbium doping of indium tin oxide electrode in resistive random ac...

题名	Effects of erbium doping of indium tin oxide electrode in resistive random access memory
链接	http://iopscience.iop.org/article/10.7567/APEX.9.034202

本帖最后由 lo7ve77 于 2016-5-19 09:12 编辑

作者: 浪淘沙 时间: 2016-5-19 08:16
链接：http://pan.baidu.com/s/1eSbhA0q 密码：mkf2

欢迎光临科研速递论坛 (http://www.expaper.cn/)