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标题: Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to in... [打印本页]

作者: tookey0116 时间: 2016-5-16 14:07
标题: Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to in...

题名	Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structure
链接	http://scitation.aip.org/content/aip/journal/jap/119/13/10.1063/1.4945579

作者: pnas2009 时间: 2016-5-16 14:07
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