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标题: Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN ... [打印本页]

作者: tookey0116 时间: 2016-4-25 09:54
标题: Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN ...

题名	Enhanced stability of complementary resistance switching in the TiN/HfOx/TiN resistive random access memory device via interface engineering
链接	http://scitation.aip.org/content/aip/journal/apl/108/8/10.1063/1.4942801

作者: majia_jiama 时间: 2016-4-25 09:54
http://pan.baidu.com/s/1kUQgTpH

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