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标题: The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films [打印本页]

作者: tookey0116 时间: 2016-3-7 09:47
标题: The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

题名	The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films
链接	http://onlinelibrary.wiley.com/doi/10.1002/pssr.201510270/abstract;jsessionid=4C2E81A16E532D191A782CCD3D2F3EE8.f01t03

作者: wwjjdd 时间: 2016-3-7 09:47
http://disk.680.com/3MV73m

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